Invention Grant
- Patent Title: Structures for measuring misalignment of patterns
- Patent Title (中): 用于测量图案不对准的结构
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Application No.: US12656552Application Date: 2010-02-03
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Publication No.: US08278759B2Publication Date: 2012-10-02
- Inventor: Wan-Seob Kim
- Applicant: Wan-Seob Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0009126 20090205
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
A structure for measuring misalignment of patterns may include a first wiring and a second wiring. The first wiring may include a first lower pattern and a first upper pattern. The first upper pattern may extend in a y-direction, and a first end portion of the first upper pattern that is relatively further toward (proximal to) a negative y-direction may contact the first lower pattern. The second wiring may include a second lower pattern and a second upper pattern. The second upper pattern may extend in the y-direction, a second end portion of the second upper pattern that is relatively further toward (proximal to) a positive y-direction may contact the second lower pattern. The second wiring may be spaced apart from the first wiring along the negative y-direction.
Public/Granted literature
- US20100193786A1 Structures for measuring misalignment of patterns Public/Granted day:2010-08-05
Information query
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