Invention Grant
- Patent Title: Overlay mark
- Patent Title (中): 叠加标记
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Application No.: US11945066Application Date: 2007-11-26
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Publication No.: US08278770B2Publication Date: 2012-10-02
- Inventor: Chin-Cheng Yang
- Applicant: Chin-Cheng Yang
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
The invention is directed to an overlay mark in a first material layer in an overlay alignment region of a wafer and the first material layer is made from a first material. The overlay mark includes a plurality of mark regions and each of the mark regions comprises a plurality mark elements embedded in the first material layer. Each of the mark elements is made of a second material different from the first material of the first material layer and the mark elements evenly distribute in the mark region.
Public/Granted literature
- US20090134531A1 OVERLAY MARK AND METHOD FOR FORMING THE SAME Public/Granted day:2009-05-28
Information query
IPC分类: