Invention Grant
- Patent Title: Power FET gate charge recovery
- Patent Title (中): 功率FET栅极充电恢复
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Application No.: US12803082Application Date: 2010-06-18
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Publication No.: US08278886B2Publication Date: 2012-10-02
- Inventor: David James Megaw
- Applicant: David James Megaw
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G05F1/613
- IPC: G05F1/613

Abstract:
A circuit for recovering charge at the gate of an output transistor arranged to drive the output of a switching circuit such as a switching regulator or controller. A substantial portion of the charge for each switching cycle is recovered under a wide range of load conditions for the switching circuit, e.g., no load, partial load, or full load. Also, charge recovery operates effectively with a switching circuit that is arranged to switch in a synchronous or asynchronous manner. Additionally, if the output voltage of a switching circuit is 12 or more volts, the amount of charge that can be saved can be relatively substantial.
Public/Granted literature
- US20100259234A1 Power FET gate charge recovery Public/Granted day:2010-10-14
Information query
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