Invention Grant
US08278935B2 Probe resistance measurement method and semiconductor device with pads for probe resistance measurement
失效
探头电阻测量方法和具有用于探针电阻测量的焊盘的半导体器件
- Patent Title: Probe resistance measurement method and semiconductor device with pads for probe resistance measurement
- Patent Title (中): 探头电阻测量方法和具有用于探针电阻测量的焊盘的半导体器件
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Application No.: US12078781Application Date: 2008-04-04
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Publication No.: US08278935B2Publication Date: 2012-10-02
- Inventor: Shigetomi Michimata , Masayuki Yanagisawa , Kazumasa Kuroyanagi
- Applicant: Shigetomi Michimata , Masayuki Yanagisawa , Kazumasa Kuroyanagi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2007-099090 20070405; JP2008-065625 20080314
- Main IPC: G01R31/08
- IPC: G01R31/08 ; G01R31/00
Abstract:
A probe resistance measuring method includes measuring first resistances at three or more nodes by making contact at least a part of a plurality of probes of a probe unit with three or more pads for resistance measurement based on a first correspondence relation. The measured resistances are stored as a first measurement result and contact resistances of the plurality of probes of the probe unit are calculated based on the first measurement result.
Public/Granted literature
- US20090008641A1 Probe resistance measurement method and semiconductor device with pads for probe resistance measurement Public/Granted day:2009-01-08
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