Invention Grant
US08279389B2 Liquid crystal display device having storage lines overlapping active layers formed of polysilicon material
有权
具有与由多晶硅材料形成的有源层重叠的存储线的液晶显示装置
- Patent Title: Liquid crystal display device having storage lines overlapping active layers formed of polysilicon material
- Patent Title (中): 具有与由多晶硅材料形成的有源层重叠的存储线的液晶显示装置
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Application No.: US11152102Application Date: 2005-06-15
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Publication No.: US08279389B2Publication Date: 2012-10-02
- Inventor: Kyung Eon Lee
- Applicant: Kyung Eon Lee
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2004-0089400 20041104
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/136
Abstract:
A poly-silicon type thin film transistor substrate includes: a plurality of gate lines and data lines defining a pixel; a pixel electrode in the pixel; a thin film transistor having a gate electrode connected to one of the gate lines, a source electrode connected to one of the data lines, a drain electrode connected to the pixel electrode, and a first active layer of poly-silicon defining a channel between the source electrode and the drain electrode; and at least two storage lines positioned on different sides of the pixel electrode.
Public/Granted literature
- US20060092342A1 Thin film transistor substrate of poly-silicon type and method of fabricating the same Public/Granted day:2006-05-04
Information query
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