Invention Grant
- Patent Title: Exposure apparatus, exposure method, and device manufacturing method
- Patent Title (中): 曝光装置,曝光方法和装置制造方法
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Application No.: US12254547Application Date: 2008-10-20
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Publication No.: US08279399B2Publication Date: 2012-10-02
- Inventor: Yuichi Shibazaki
- Applicant: Yuichi Shibazaki
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03B27/58

Abstract:
When a transition is performed from a state where one wafer stage is positioned in an area including a liquid immersion area to a state where the other wafer stage is positioned in the area including the liquid immersion area, eaves sections arranged in both wafer stages are to be engaged to make a proximity or a contact state in the X-axis direction, and both stages are simultaneously driven in the X-axis direction while maintaining the state. In this manner, the liquid immersion area moves back and forth between the two stages via the eaves sections. This can restrain leakage of the liquid via a gap between both wafer stages, and further, a liquid leakage to the reflection surfaces arranged on the side surface of both wafer stages can be restrained. Further, interference between the reflection surfaces arranged in both wafer stages can be avoided.
Public/Granted literature
- US20090128790A1 EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD Public/Granted day:2009-05-21
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