Disclosed herein is a super-resolution lithography apparatus and method based on a multiple light exposure method. The super-resolution lithography apparatus comprises a photographic medium having energy levels of a first ground state, a second ground state, a first excited state, a second excited state and a quenching state; a first light source inducing energy level transition between the first ground state and the first excited state of the photographic medium; a second light source inducing energy level transition between the second ground state and the first excited state of the photographic medium; and a third light source inducing energy level transition between the second ground state and the second excited state of the photographic medium. Accordingly, the resolution of lithography can be improved simply by using a photographic medium having a simple structure and conventional laser beams and increasing the number of exposure steps. Furthermore, a multiple photon absorber that is difficult to obtain, a medium having a complicated energy level and a high-efficiency quantum optical light are unnecessary, and thus economic efficiency is improved.