Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US12877112Application Date: 2010-09-08
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Publication No.: US08279605B2Publication Date: 2012-10-02
- Inventor: Yasuhiko Kawanami , Tasuku Isobe
- Applicant: Yasuhiko Kawanami , Tasuku Isobe
- Applicant Address: JP Kitakyushu-Shi
- Assignee: Kabushiki Kaisha Yaskawa Denki
- Current Assignee: Kabushiki Kaisha Yaskawa Denki
- Current Assignee Address: JP Kitakyushu-Shi
- Agency: Ditthavong Mori & Steiner, P.C.
- Priority: JP2008-153626 20080612; JP2008-283968 20081105; JP2009-049840 20090303
- Main IPC: H05K7/20
- IPC: H05K7/20
Abstract:
The present invention provides a power module in which a first semiconductor device disposed on a first substrate and a second semiconductor device disposed on a second substrate are disposed at symmetrical positions with a third substrate interposed therebetween.
Public/Granted literature
- US20110057713A1 POWER MODULE Public/Granted day:2011-03-10
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