Invention Grant
- Patent Title: Nonvolatile stacked nand memory
- Patent Title (中): 非易失性堆放内存
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Application No.: US12928396Application Date: 2010-12-10
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Publication No.: US08279656B2Publication Date: 2012-10-02
- Inventor: Wei-Chih Chien , Yan-Ru Chen , Yi-Chou Chen
- Applicant: Wei-Chih Chien , Yan-Ru Chen , Yi-Chou Chen
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A memory cell is arranged to enhance the electrical field of the memory element. The memory cell has a metal-oxide memory element, a nonconductive element, and a conductive element. The metal-oxide memory element is in a current path between a first electrode at a first voltage and a second electrode at a second voltage. The nonconductive element is adjacent to the metal-oxide memory element.
Public/Granted literature
- US20110317471A1 Nonvolatile stacked nand memory Public/Granted day:2011-12-29
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