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US08279656B2 Nonvolatile stacked nand memory 有权
非易失性堆放内存

Nonvolatile stacked nand memory
Abstract:
A memory cell is arranged to enhance the electrical field of the memory element. The memory cell has a metal-oxide memory element, a nonconductive element, and a conductive element. The metal-oxide memory element is in a current path between a first electrode at a first voltage and a second electrode at a second voltage. The nonconductive element is adjacent to the metal-oxide memory element.
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