Invention Grant
- Patent Title: Semiconductor storage device to correct threshold distribution of memory cells by rewriting and method of controlling the same
- Patent Title (中): 通过重写来校正存储单元的阈值分布的半导体存储装置及其控制方法
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Application No.: US12855243Application Date: 2010-08-12
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Publication No.: US08279669B2Publication Date: 2012-10-02
- Inventor: Norihiro Fujita , Yasuyuki Fukuda
- Applicant: Norihiro Fujita , Yasuyuki Fukuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-187825 20090813
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
According to one embodiment, a semiconductor storage device includes a first cell, a second cell, a bit line, a first buffer, a second buffer, and a controller. The bit line transfers the data to the first cell and the second cell. The first buffer holds write data to the first cell and the second cell. The second buffer holds read data from the first cell. The controller controls first writing and rewriting executed for the first cell and second writing executed for the second cell. The write data in the first buffer is updated each time a second write signal is given. The controller executes the first writing based on the write data held by the first buffer. The controller performs the second writing based on the write data updated in the first buffer. The controller executes the rewriting based on the read data held by the second buffer.
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