Invention Grant
US08279671B2 Flash memory devices, methods for programming the same, and memory systems including the same
有权
闪存设备，用于对其进行编程的方法以及包括其的存储器系统
- Patent Title: Flash memory devices, methods for programming the same, and memory systems including the same
- Patent Title (中): 闪存设备，用于对其进行编程的方法以及包括其的存储器系统
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Application No.: US12711383Application Date: 2010-02-24
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Publication No.: US08279671B2Publication Date: 2012-10-02
- Inventor: Jae Ho Kim , Jungdal Choi , Hyunjae Kim , Hyun-Sil Oh
- Applicant: Jae Ho Kim , Jungdal Choi , Hyunjae Kim , Hyun-Sil Oh
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2009-0016404 20090226
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A programming method of a nonvolatile memory device is provided including: applying a local voltage to a first unselected word line; applying a local voltage to a second unselected word line, after the local voltage is applied to the first unselected word line; and applying a pass voltage to the first unselected word line, after the local voltage is applied to the second unselected word line. Related devices and systems are also provided herein.
Public/Granted literature
- US20100214846A1 Flash Memory Devices, Methods for Programming the Same, and Memory Systems Including the Same Public/Granted day:2010-08-26
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