Invention Grant
- Patent Title: Low power termination for memory modules
- Patent Title (中): 内存模块的低功耗终端
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Application No.: US13109770Application Date: 2011-05-17
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Publication No.: US08279689B2Publication Date: 2012-10-02
- Inventor: Ripan Das
- Applicant: Ripan Das
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: KED & Associates, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An apparatus is provided that includes a memory controller to provide a first on-die termination (ODT) signal and a second ODT signal, a memory channel, a first memory module to couple to the memory channel, and a second memory module to couple to the memory channel. The first memory module may include a first memory having a first ODT circuit to receive the first ODT signal, and a second memory having a second ODT circuit to receive the first ODT signal. The first ODT signal may disable the ODT circuit of the first memory when the first memory is to be ACTIVE.
Public/Granted literature
- US20110216613A1 LOW POWER TERMINATION FOR MEMORY MODULES Public/Granted day:2011-09-08
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