Invention Grant
US08279693B2 Programmable tracking circuit for tracking semiconductor memory read current 有权
用于跟踪半导体存储器的可编程跟踪电路读电流

  • Patent Title: Programmable tracking circuit for tracking semiconductor memory read current
  • Patent Title (中): 用于跟踪半导体存储器的可编程跟踪电路读电流
  • Application No.: US12757485
    Application Date: 2010-04-09
  • Publication No.: US08279693B2
    Publication Date: 2012-10-02
  • Inventor: Zhongze Wang
  • Applicant: Zhongze Wang
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Programmable tracking circuit for tracking semiconductor memory read current
Abstract:
One example memory device includes a memory array, a sense amplifier, and a tracking circuit. The memory array is formed of a plurality of memory cells. The sense amplifier is for accessing the memory array. The tracking circuit is for tracking memory read current of the memory array. The tracking circuit comprises one or more columns of tracking cells. Each column is coupled to a corresponding bit line to provide a drive current on the bit line for triggering a memory read operation by the sense amplifier. At least one of the columns comprises two tracking cells connected in series to each other.
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