Invention Grant
US08279700B2 Semiconductor electrically programmable fuse (eFuse) having a polysilicon layer not doped with an impurity ion and a programming method thereof
有权
具有未掺杂杂质离子的多晶硅层的半导体电可编程熔丝（eFuse）及其编程方法
- Patent Title: Semiconductor electrically programmable fuse (eFuse) having a polysilicon layer not doped with an impurity ion and a programming method thereof
- Patent Title (中): 具有未掺杂杂质离子的多晶硅层的半导体电可编程熔丝（eFuse）及其编程方法
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Application No.: US12656859Application Date: 2010-02-18
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Publication No.: US08279700B2Publication Date: 2012-10-02
- Inventor: Osamu Wada , Toshimasa Namekawa
- Applicant: Osamu Wada , Toshimasa Namekawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2009-117872 20090514
- Main IPC: G11C17/16
- IPC: G11C17/16 ; H01L23/52
Abstract:
A semiconductor device includes a first terminal, a second terminal, and a fuse link that connects between the first terminal and the second terminal. The first terminal and the fuse link have a polysilicon layer doped with an impurity ion and a layer containing a metal element laminated on the polysilicon layer. The second terminal has a polysilicon layer not doped with an impurity ion and a layer containing a metal element laminated on the polysilicon layer, in at least a part of an end side connected to the fuse link.
Public/Granted literature
- US20100290303A1 Semiconductor device Public/Granted day:2010-11-18
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