Invention Grant
- Patent Title: Laser diode and method of manufacturing the same
- Patent Title (中): 激光二极管及其制造方法
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Application No.: US12769834Application Date: 2010-04-29
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Publication No.: US08279906B2Publication Date: 2012-10-02
- Inventor: Hidekazu Kawanishi , Junji Sawahata
- Applicant: Hidekazu Kawanishi , Junji Sawahata
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2009-118900 20090515
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side faces of the ridge in at least one of the resonator end faces of the pair of resonator end face and in the vicinity thereof. A thickness from the active layer to a surface of the upland section is larger on the resonator end face side and is smaller on a central side of the ridge, and the thickness is continuously changed from a thick portion on the resonator end face side to a thin portion on the central side of the ridge.
Public/Granted literature
- US20100290493A1 LASER DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-11-18
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