Invention Grant
US08280148B2 Pattern defect analysis equipment, pattern defect analysis method and pattern defect analysis program
有权
图案缺陷分析设备,图案缺陷分析方法和图案缺陷分析程序
- Patent Title: Pattern defect analysis equipment, pattern defect analysis method and pattern defect analysis program
- Patent Title (中): 图案缺陷分析设备,图案缺陷分析方法和图案缺陷分析程序
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Application No.: US13349402Application Date: 2012-01-12
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Publication No.: US08280148B2Publication Date: 2012-10-02
- Inventor: Norio Satou , Susumu Koyama , Masashi Sakamoto , Kenji Obara
- Applicant: Norio Satou , Susumu Koyama , Masashi Sakamoto , Kenji Obara
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-006163 20080115
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.
Public/Granted literature
- US20120114221A1 PATTERN DEFECT ANALYSIS EQUIPMENT, PATTERN DEFECT ANALYSIS METHOD AND PATTERN DEFECT ANALYSIS PROGRAM Public/Granted day:2012-05-10
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