Invention Grant
- Patent Title: Multi-level saturation
- Patent Title (中): 多级饱和度
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Application No.: US11397421Application Date: 2006-04-03
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Publication No.: US08280420B2Publication Date: 2012-10-02
- Inventor: Thomas Sun , Raghuraman Krishnamoorthi
- Applicant: Thomas Sun , Raghuraman Krishnamoorthi
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Ryan N. Farr
- Main IPC: H04B15/00
- IPC: H04B15/00

Abstract:
The claimed subject matter relates to enforcing a threshold peak to average power while reducing affects associated with saturation. This can be accomplished, for instance, by assessing piecewise linear approximation of an ideal saturation region, wherein the ideal saturation region is based at least in part upon the threshold peak to average ratio. Thereafter, a desirably transmitted signal can be saturated if power associated with the signal lies outside a region encompassed by the piecewise linear approximation.
Public/Granted literature
- US20070232250A1 Multi-level saturation Public/Granted day:2007-10-04
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