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US08280672B2 Trimming circuit of semiconductor memory apparatus and trimming method thereof 有权
半导体存储装置的微调电路及其修整方法

  • Patent Title: Trimming circuit of semiconductor memory apparatus and trimming method thereof
  • Patent Title (中): 半导体存储装置的微调电路及其修整方法
  • Application No.: US12347041
    Application Date: 2008-12-31
  • Publication No.: US08280672B2
    Publication Date: 2012-10-02
  • Inventor: Jee-Yul Kim
  • Applicant: Jee-Yul Kim
  • Applicant Address: KR
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR
  • Agency: Baker & McKenzie LLP
  • Priority: KR10-2008-0100549 20081014
  • Main IPC: G06F19/00
  • IPC: G06F19/00 ;  H01H37/76
Trimming circuit of semiconductor memory apparatus and trimming method thereof
Abstract:
A trimming circuit for a semiconductor memory apparatus includes a trimming code generator configured to provide a trimming code signal group by performing one of addition and subtraction using a test mode signal and a fuse coding signal, and an internal voltage generator configured to provide trimmed voltage in response to the trimming code signal group as output voltage.
Abstract(Chinese):

一种半导体存储装置的微调电路，包括修整码发生器，其被配置为通过使用测试模式信号和熔丝编码信号执行加法和减法之一来提供修整码信号组，以及内部电压发生器，被配置为提供修整电压， 响应修整码信号组作为输出电压。

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