Invention Grant
US08281264B2 Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction
有权
基于模型的模式表征,以生成基于规则模型的混合光学邻近校正规则
- Patent Title: Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction
- Patent Title (中): 基于模型的模式表征,以生成基于规则模型的混合光学邻近校正规则
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Application No.: US12592674Application Date: 2009-12-01
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Publication No.: US08281264B2Publication Date: 2012-10-02
- Inventor: Youping Zhang
- Applicant: Youping Zhang
- Applicant Address: US CA Santa Clara
- Assignee: Takumi Technology Corporation
- Current Assignee: Takumi Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agent William C. Milks, III
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F9/455 ; G06F11/22

Abstract:
A system and method are provided for analyzing layout patterns via simulation using a lithography model to characterize the patterns and generate rules to be used in rule-based optical proximity correction (OPC). The system and method analyze a series of layout patterns conforming to a set of design rules by simulation using a lithography model to obtain a partition of the pattern spaces into one portion that requires only rule-based OPC and another portion that requires model-based OPC. A corresponding hybrid OPC system and method are also introduced that utilize the generated rules to correct an integrated circuit (IC) design layout which reduces the OPC output complexity and improves turnaround time.
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