Invention Grant
- Patent Title: Method for manufacturing semiconductor integrated circuit and recording medium
- Patent Title (中): 半导体集成电路和记录介质的制造方法
-
Application No.: US12834339Application Date: 2010-07-12
-
Publication No.: US08281276B2Publication Date: 2012-10-02
- Inventor: Nobuaki Nonaka
- Applicant: Nobuaki Nonaka
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2009-178409 20090730
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for manufacturing a semiconductor integrated circuit includes: generating first data by performing floor planning based on semiconductor integrated circuit information and monitor path circuit information; generating second data by arranging at least one monitor path flip-flop and at least one monitor path circuit element in the first data based on monitor path position information; generating third data by performing arrangement or wiring based on the second data; generating a first timing analysis result by performing timing analysis on data corresponding to the semiconductor integrated circuit information of the third data; generating a second timing analysis result by performing timing analysis on data corresponding to the monitor path circuit information of the third data; modifying the semiconductor integrated circuit information by comparing the first timing analysis result with the second timing analysis result; and manufacturing the semiconductor integrated circuit based on the modified semiconductor integrated circuit information.
Public/Granted literature
- US20110029943A1 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT AND RECORDING MEDIUM Public/Granted day:2011-02-03
Information query