Etch apparatus and method of etching silicon nitride

Invention Grant

US08282766B2 Etch apparatus and method of etching silicon nitride 有权

Title translation: 蚀刻装置和蚀刻氮化硅的方法

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Patent Title: Etch apparatus and method of etching silicon nitride
Patent Title (中): 蚀刻装置和蚀刻氮化硅的方法
Application No.: US12274072

Application Date: 2008-11-19
Publication No.: US08282766B2

Publication Date: 2012-10-09
Inventor: Gerhard Eilmsteiner , Johann Ninaus
Applicant: Gerhard Eilmsteiner , Johann Ninaus
Applicant Address: AT Unterpremstätten
Assignee: Austriamicrosystems AG
Current Assignee: Austriamicrosystems AG
Current Assignee Address: AT Unterpremstätten
Agent Cozen O'Connor
Main IPC: H01L21/306
IPC: H01L21/306

Etch apparatus and method of etching silicon nitride

Abstract:

An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.

Abstract(Chinese):

特别是用于氮化硅蚀刻的蚀刻装置包括耦合到包括加热器电流传感器的组件组中的至少一个部件的控制单元，泵换能器传感器和用于稀释液体的流量传感器。避免了设备的故障，并且可以控制蚀刻工艺以获得更好的性能。

Public/Granted literature

US20100124824A1 Etch Apparatus and Method of Etching Silicon Nitride Public/Granted day:2010-05-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）