Invention Grant
- Patent Title: Method for etching metal nitride with high selectivity to other materials
- Patent Title (中): 高选择性地蚀刻金属氮化物的方法
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Application No.: US11832382Application Date: 2007-08-01
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Publication No.: US08282844B2Publication Date: 2012-10-09
- Inventor: Akiteru Ko , Hiroyuki Takahashi , Masayuki Sawataishi
- Applicant: Akiteru Ko , Hiroyuki Takahashi , Masayuki Sawataishi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a hydrocarbon gas having the chemical formula CxHy, where x and y are equal to unity or greater.
Public/Granted literature
- US20100206841A2 Method for etching metal nitride with high selectivity to other materials Public/Granted day:2010-08-19
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