Invention Grant
US08282846B2 Metal interconnect structure with a side wall spacer that protects an ARC layer and a bond pad from corrosion and method of forming the metal interconnect structure
有权
金属互连结构，其具有保护ARC层和焊盘免受腐蚀的侧壁间隔物以及形成金属互连结构的方法
- Patent Title: Metal interconnect structure with a side wall spacer that protects an ARC layer and a bond pad from corrosion and method of forming the metal interconnect structure
- Patent Title (中): 金属互连结构，其具有保护ARC层和焊盘免受腐蚀的侧壁间隔物以及形成金属互连结构的方法
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Application No.: US12714450Application Date: 2010-02-27
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Publication No.: US08282846B2Publication Date: 2012-10-09
- Inventor: Rodney L. Hill
- Applicant: Rodney L. Hill
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: C23F1/00
- IPC: C23F1/00 ; B44C1/22 ; H01B13/00 ; H01B5/00
Abstract:
A metal interconnect structure, which includes a bond pad, an overlying anti-reflective coating layer, an overlying passivation layer, and an opening that exposes a top surface of the bond pad, eliminates corrosion resulting from the anti-reflective layer being exposed to moisture during reliability testing by utilizing a side wall spacer in the opening that touches the side wall of the passivation layer, the side wall of the anti-reflective coating layer, and the top surface of the bond pad.
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