Invention Grant
US08283200B2 Manufacturing method of thin film transistor and thin film transistor, and display
失效
制造薄膜晶体管和薄膜晶体管的方法，并进行显示
- Patent Title: Manufacturing method of thin film transistor and thin film transistor, and display
- Patent Title (中): 制造薄膜晶体管和薄膜晶体管的方法，并进行显示
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Application No.: US11746738Application Date: 2007-05-10
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Publication No.: US08283200B2Publication Date: 2012-10-09
- Inventor: Noriyuki Kawashima , Kazumasa Nomoto , Akihiro Nomoto
- Applicant: Noriyuki Kawashima , Kazumasa Nomoto , Akihiro Nomoto
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JPP2006-135995 20060516
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
Public/Granted literature
- US20080164463A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR, AND DISPLAY Public/Granted day:2008-07-10
Information query
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