Method for manufacturing semiconductor memory device

Invention Grant

US08283227B2 Method for manufacturing semiconductor memory device 有权

Title translation: 制造半导体存储器件的方法

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Patent Title: Method for manufacturing semiconductor memory device
Patent Title (中): 制造半导体存储器件的方法
Application No.: US13282814

Application Date: 2011-10-27
Publication No.: US08283227B2

Publication Date: 2012-10-09
Inventor: Toshiyuki Hirota , Takakazu Kiyomura
Applicant: Toshiyuki Hirota , Takakazu Kiyomura
Applicant Address: JP Tokyo
Assignee: Elpida Memory, Inc.
Current Assignee: Elpida Memory, Inc.
Current Assignee Address: JP Tokyo
Agency: Young & Thompson
Priority: JP2010-249791 20101108
Main IPC: H01L21/8242
IPC: H01L21/8242

Method for manufacturing semiconductor memory device

Abstract:

In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the crystal of the dielectric film is not grown on the surface of the dielectric film, the first upper electrode and the dielectric film are heat-treated at a temperature that the crystal of the dielectric film is grown to convert at least a portion of the dielectric film into a crystalline state. Thereafter, a second upper electrode is formed on the surface of the first upper electrode.

Abstract(Chinese):

在制造半导体存储器件的方法中，在半导体衬底上形成包括氮化钛膜的三维下电极，并且在下电极的表面上形成电介质膜。在电介质膜的晶体不在电介质膜的表面上生长的温度下形成第一上电极之后，在电介质膜的晶体的温度下对第一上电极和电介质膜进行热处理生长以将至少一部分电介质膜转化为结晶状态。此后，在第一上电极的表面上形成第二上电极。

Public/Granted literature

US20120115300A1 METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-05-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）