Invention Grant
- Patent Title: Methods of forming microdevice substrates using double-sided alignment techniques
- Patent Title (中): 使用双面对准技术形成微装置基板的方法
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Application No.: US13034004Application Date: 2011-02-24
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Publication No.: US08283256B1Publication Date: 2012-10-09
- Inventor: Wanling Pan , Harmeet Bhugra
- Applicant: Wanling Pan , Harmeet Bhugra
- Applicant Address: US CA San Jose
- Assignee: Integrated Device Technology inc.
- Current Assignee: Integrated Device Technology inc.
- Current Assignee Address: US CA San Jose
- Agency: Myers, Bigel et al.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
Methods of forming substrates having two-sided microstructures therein include selectively etching a first surface of the substrate to define a plurality of alignment keys therein that extend through the substrate to a second surface thereof. A direct photolithographic alignment step is then performed on a second surface of the substrate by aligning a photolithography mask to the plurality of alignment keys at the second surface. This direct alignment step is performed during steps to photolithographically define patterns in the second surface.
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