Invention Grant
- Patent Title: Methods of removing a metal nitride material
- Patent Title (中): 去除金属氮化物材料的方法
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Application No.: US12872564Application Date: 2010-08-31
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Publication No.: US08283259B2Publication Date: 2012-10-09
- Inventor: Sanjeev Sapra , Janos Fucsko
- Applicant: Sanjeev Sapra , Janos Fucsko
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/302
Abstract:
A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material.
Public/Granted literature
- US20120052678A1 METHODS OF REMOVING A METAL NITRIDE MATERIAL Public/Granted day:2012-03-01
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