Invention Grant
- Patent Title: Method to enhance charge trapping
- Patent Title (中): 增强电荷捕获的方法
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Application No.: US12640760Application Date: 2009-12-17
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Publication No.: US08283265B2Publication Date: 2012-10-09
- Inventor: Deepak Ramappa , Kyu-Ha Shim
- Applicant: Deepak Ramappa , Kyu-Ha Shim
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device.
Public/Granted literature
- US20100155909A1 METHOD TO ENHANCE CHARGE TRAPPING Public/Granted day:2010-06-24
Information query
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