Invention Grant
- Patent Title: Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
- Patent Title (中): 异质结太阳能电池基于外延晶体硅薄膜在冶金硅基板上的设计
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Application No.: US12401314Application Date: 2009-03-10
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Publication No.: US08283557B2Publication Date: 2012-10-09
- Inventor: Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
- Applicant: Chentao Yu , Jiunn Benjamin Heng , Zheng Xu , Jianming Fu , Jianjun Liang
- Applicant Address: US CA Fremont
- Assignee: Silevo, Inc.
- Current Assignee: Silevo, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Park, Vaughan, Fleming & Dowler LLP
- Agent Shun Yao
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
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