Invention Grant
US08283559B2 Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells 有权
Si外延薄膜太阳能电池的硅基介质堆叠钝化

Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells
Abstract:
One embodiment of the present invention provides a solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a first layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the first heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a second layer of heavily doped crystalline-Si situated above the lightly doped crystalline-Si layer, a first layer of dielectric situated above the second heavily doped crystalline-Si layer, a second layer of dielectric situated above the first dielectric layer, and front electrodes situated above the second dielectric layer.
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