Invention Grant
US08283559B2 Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells
有权
Si外延薄膜太阳能电池的硅基介质堆叠钝化
- Patent Title: Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells
- Patent Title (中): Si外延薄膜太阳能电池的硅基介质堆叠钝化
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Application No.: US12421470Application Date: 2009-04-09
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Publication No.: US08283559B2Publication Date: 2012-10-09
- Inventor: Chentao Yu , Jianming Fu , Jiunn Benjamin Heng
- Applicant: Chentao Yu , Jianming Fu , Jiunn Benjamin Heng
- Applicant Address: US CA Fremont
- Assignee: Silevo, Inc.
- Current Assignee: Silevo, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Park, Vaughan, Fleming & Dowler LLP
- Agent Shun Yao
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/18

Abstract:
One embodiment of the present invention provides a solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a first layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the first heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a second layer of heavily doped crystalline-Si situated above the lightly doped crystalline-Si layer, a first layer of dielectric situated above the second heavily doped crystalline-Si layer, a second layer of dielectric situated above the first dielectric layer, and front electrodes situated above the second dielectric layer.
Public/Granted literature
- US20100258168A1 SILICON-BASED DIELECTRIC STACK PASSIVATION OF SI-EPITAXIAL THIN-FILM SOLAR CELLS Public/Granted day:2010-10-14
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