Invention Grant
- Patent Title: Resistance variable memory cell
- Patent Title (中): 电阻变量记忆单元
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Application No.: US13313636Application Date: 2011-12-07
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Publication No.: US08283648B2Publication Date: 2012-10-09
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with phase change memory cells, which can provide various benefits including improved data reliability and retention and decreased read and/or write times, among various other benefits. One or more embodiments can reduce the number of processing steps associated with providing local interconnects to phase change memory arrays.
Public/Granted literature
- US20120074370A1 PHASE CHANGE MEMORY STRUCTURES AND METHODS Public/Granted day:2012-03-29
Information query
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