Invention Grant
US08283708B2 Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
有权
形成半导体器件的半导体器件和方法，该半导体器件具有减小宽度的扩散区域
- Patent Title: Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
- Patent Title (中): 形成半导体器件的半导体器件和方法，该半导体器件具有减小宽度的扩散区域
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Application No.: US12562635Application Date: 2009-09-18
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Publication No.: US08283708B2Publication Date: 2012-10-09
- Inventor: Lequn Liu , Yongjun Jeff Hu , Anish A. Khandekar
- Applicant: Lequn Liu , Yongjun Jeff Hu , Anish A. Khandekar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more diffusion regions comprise a first width at a depth below the surface of the semiconductor and a second width near the surface of the semiconductor, the second width of the one or more diffusion regions being less than about 40% greater than the first width.
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