Invention Grant
US08283710B2 Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
有权
具有用于阵列晶体管的外延SiC和/或碳酸化通道的低暗电流图像传感器
- Patent Title: Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
- Patent Title (中): 具有用于阵列晶体管的外延SiC和/或碳酸化通道的低暗电流图像传感器
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Application No.: US12153151Application Date: 2008-05-14
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Publication No.: US08283710B2Publication Date: 2012-10-09
- Inventor: Chandra Mouli
- Applicant: Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.
Public/Granted literature
- US20090114959A1 Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors Public/Granted day:2009-05-07
Information query
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