Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
-
Application No.: US12886225Application Date: 2010-09-20
-
Publication No.: US08283717B2Publication Date: 2012-10-09
- Inventor: Junya Matsunami , Hiroyuki Kutsukake
- Applicant: Junya Matsunami , Hiroyuki Kutsukake
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-256366 20091109
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/336 ; H01L21/22 ; H01L21/38
Abstract:
Device isolation/insulation films each have a first height within a first area and a second height higher than the first height within a second area. At least the device isolation/insulation films adjacent to a contact diffusion region exist in the second area, and the device isolation/insulation films adjacent to memory transistors exist in the first area. The device isolation/insulation films are implanted with an impurity of a first conductivity type, and device formation regions each have a diffusion region of the first conductivity type, the diffusion region being formed by diffusion of the impurity of the first conductivity type from the device isolation/insulation films.
Public/Granted literature
- US20110108901A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2011-05-12
Information query
IPC分类:
