Invention Grant
US08283730B2 Negative differential resistance device with high PVCR and fast switching speed and memory using the same
有权
负差分电阻器件具有高PVCR和快速开关速度和存储器使用相同
- Patent Title: Negative differential resistance device with high PVCR and fast switching speed and memory using the same
- Patent Title (中): 负差分电阻器件具有高PVCR和快速开关速度和存储器使用相同
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Application No.: US12472345Application Date: 2009-05-26
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Publication No.: US08283730B2Publication Date: 2012-10-09
- Inventor: Shu-Lu Chen
- Applicant: Shu-Lu Chen
- Agency: HDLS IPR Services
- Agent Chun-Ming Shih
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A negative differential resistance (NDR) device is designed and a possible compact device implementation is presented. The NDR device includes a voltage blocker and a current blocker and exhibits high peak-to-valley current ratio (PVCR) as well as high switching speed. The corresponding process and design are completely compatible with contemporary Si CMOS technology and area efficient. A single-NDR element SRAM cell prototype with a compact size and high speed is also proposed as its application suitable for embedded memory.
Public/Granted literature
- US20090294869A1 Negative Differential Resistance Device and Memory Using the Same Public/Granted day:2009-12-03
Information query
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