Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12588039Application Date: 2009-10-01
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Publication No.: US08283732B2Publication Date: 2012-10-09
- Inventor: Hiroshi Sunamura , Kouji Masuzaki
- Applicant: Hiroshi Sunamura , Kouji Masuzaki
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-257038 20081002
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
Provided is a semiconductor device including a substrate, a gate insulating film which is formed on the substrate, and a gate electrode which is provided on the gate insulating film. The gate electrode includes a first metal silicide including a first metal material, and a second metal silicide including one of a second metal material and the second metal material in a contact portion between the gate insulating film and the gate electrode. The second metal silicide including the second metal material is a metal-rich silicide in which the composition ratio of the second metal material to silicon in the second metal silicide including the second metal is greater than 1.
Public/Granted literature
- US20100084716A1 Semiconductor device Public/Granted day:2010-04-08
Information query
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