Invention Grant
- Patent Title: Hydrogen ion sensing device using of arrayed gated lateral BJT
- Patent Title (中): 氢离子感测装置采用阵列门控侧向BJT
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Application No.: US13031208Application Date: 2011-02-19
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Publication No.: US08283736B2Publication Date: 2012-10-09
- Inventor: Shin Won Kang , Hyurk Choon Kwon , Se Hyuk Yeom
- Applicant: Shin Won Kang , Hyurk Choon Kwon , Se Hyuk Yeom
- Applicant Address: KR Daegu-si
- Assignee: Kyungpook National University Industry Academic Cooperation
- Current Assignee: Kyungpook National University Industry Academic Cooperation
- Current Assignee Address: KR Daegu-si
- Agency: Revolution IP, PLLC
- Priority: KR10-2010-0015058 20100219
- Main IPC: H01L29/73
- IPC: H01L29/73

Abstract:
A hydrogen ion sensing device of the present invention includes: a reference electrode; a sensing portion which senses hydrogen ions by contacting an ion aqueous solution; and a plurality of ring-like lateral bipolar junction transistors, each including a lateral collector, an emitter, a vertical collector and a floating gate connected to the reference electrode, with the emitter surrounded by the floating gate and the lateral collector, wherein the plurality of ring-like lateral bipolar junction transistors are formed on a common substrate and are connected in parallel.
Public/Granted literature
- US20110204455A1 HYDROGEN ION SENSING DEVICE USING OF ARRAYED GATED LATERAL BJT Public/Granted day:2011-08-25
Information query
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