Invention Grant
- Patent Title: Molybdenum-doped indium oxide structures and methods
- Patent Title (中): 钼掺杂氧化铟结构及方法
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Application No.: US12409906Application Date: 2009-03-24
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Publication No.: US08283744B2Publication Date: 2012-10-09
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain indium and monolayers that contain molybdenum are deposited onto a substrate and subsequently processed to form molybdenum-doped indium oxide. The resulting transparent conducing oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducing oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
Public/Granted literature
- US20090179292A1 MOLYBDENUM-DOPED INDIUM OXIDE STRUCTURES AND METHODS Public/Granted day:2009-07-16
Information query
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