Invention Grant
US08283744B2 Molybdenum-doped indium oxide structures and methods 有权
钼掺杂氧化铟结构及方法

Molybdenum-doped indium oxide structures and methods
Abstract:
Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain indium and monolayers that contain molybdenum are deposited onto a substrate and subsequently processed to form molybdenum-doped indium oxide. The resulting transparent conducing oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducing oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
Public/Granted literature
Information query
Patent Agency Ranking
0/0