Invention Grant
- Patent Title: Lead frame interconnect scheme with high power density
- Patent Title (中): 具有高功率密度的引线框架互连方案
-
Application No.: US12760365Application Date: 2010-04-14
-
Publication No.: US08283760B1Publication Date: 2012-10-09
- Inventor: Ken Pham , Anindya Poddar , Ashok S. Prabhu
- Applicant: Ken Pham , Anindya Poddar , Ashok S. Prabhu
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L23/48
Abstract:
An integrated circuit package configured to incorporate a lead frame and methods for its making are is described. The package comprising an IC with aluminum bond pads in communication with circuitry of the die with lead frame with silver bond pads. The package having gold bumps bonded between the aluminum bond pad of the die and the silver bond pad of the lead frame. The package including an encapsulant envelope and including various materials and bond pad structures and constructed in a manner formed by thermosonically or thermocompressionally bonding the gold balls to the bond pads. Also, disclosed are methods of making the package.
Information query
IPC分类:
