Invention Grant
- Patent Title: Power semiconductor module and fabrication method thereof
- Patent Title (中): 功率半导体模块及其制造方法
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Application No.: US11762276Application Date: 2007-06-13
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Publication No.: US08283763B2Publication Date: 2012-10-09
- Inventor: Kazuhiro Oyama , Mutsuhiro Mori , Katsuaki Saito , Yoshihiko Koike
- Applicant: Kazuhiro Oyama , Mutsuhiro Mori , Katsuaki Saito , Yoshihiko Koike
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-167267 20060616
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate.
Public/Granted literature
- US20070290305A1 Power Semiconductor Module and Fabrication Method Thereof Public/Granted day:2007-12-20
Information query
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