Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12833133Application Date: 2010-07-09
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Publication No.: US08283787B2Publication Date: 2012-10-09
- Inventor: Won-John Choi , Su-Hyun Kim
- Applicant: Won-John Choi , Su-Hyun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0050768 20100531
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a through-silicon-via arranged to couple a plurality of stacked semiconductor chips, an interconnection line coupled to the through-silicon-via at one side and arranged to couple the through-silicon-via to the semiconductor chip, an internal interconnection line disposed at the other side of the interconnection line and intersected with the interconnection line, and at least one first contact disposed to couple the internal interconnection line to the interconnection line. A region of the interconnection line in which the internal interconnection line is disposed is equally divided, and an area between the divided regions is removed.
Public/Granted literature
- US20110291290A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-12-01
Information query
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