Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US12774370Application Date: 2010-05-05
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Publication No.: US08283969B2Publication Date: 2012-10-09
- Inventor: Toshiharu Okamoto
- Applicant: Toshiharu Okamoto
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-151059 20090625
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Provided is a semiconductor apparatus including a divided voltage generation circuit that includes a first resistor element and a first transistor connected in series between a first power supply and a second power supply and generates a divided voltage by dividing a voltage difference between the first power supply and the second power supply with a resistance ratio of the first resistor element and the first transistor specified according to a level of a first current flowing to the first transistor, and a current control circuit that includes a second transistor that is connected in a mirror configuration to the first transistor and determines the level of the first current by a control current flowing from a first terminal to a second terminal, and increases and decreases the control current according to an increase and decrease in a voltage difference between the first power supply and a ground power supply.
Public/Granted literature
- US20100327846A1 SEMICONDUCTOR APPARATUS Public/Granted day:2010-12-30
Information query
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