Invention Grant
- Patent Title: Magnetic random access memory and operating method of the same
- Patent Title (中): 磁性随机存取存储器和操作方法相同
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Application No.: US12741299Application Date: 2008-10-30
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Publication No.: US08284595B2Publication Date: 2012-10-09
- Inventor: Ryusuke Nebashi , Noboru Sakimura , Tadahiko Sugibayashi
- Applicant: Ryusuke Nebashi , Noboru Sakimura , Tadahiko Sugibayashi
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-290681 20071108
- International Application: PCT/JP2008/069770 WO 20081030
- International Announcement: WO2009/060783 WO 20090514
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A MRAM includes: first and second bit lines provided to extend in a first direction; a storage block including at least one magnetroresistive element for storing data; and a reading circuit. The reading circuit includes a first terminal electrically connected to the first bit line, and a second terminal electrically connected to the second bit line. The second terminal has a high impedance preventing a steady-state current from flowing into at a time of a reading operation. The reading circuit supplies a reading current from the first terminal to the first bit line at the time of the reading operation. The storage block is configured such that the reading current flows from the first bit line to the magnetroresistive element and the magnetroresistive element is connected to the second bit line at the time of the reading operation. The reading circuit controls the reading current on the basis of a voltage applied to the second terminal through the second bit line.
Public/Granted literature
- US20100238719A1 MAGNETIC RANDOM ACCESS MEMORY AND OPERATING METHOD OF THE SAME Public/Granted day:2010-09-23
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