Invention Grant
- Patent Title: Thin-film transistor and forming method thereof
- Patent Title (中): 薄膜晶体管及其形成方法
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Application No.: US12651992Application Date: 2010-01-04
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Publication No.: US08288767B2Publication Date: 2012-10-16
- Inventor: Ching-Fuh Lin , Chun-Yu Lee
- Applicant: Ching-Fuh Lin , Chun-Yu Lee
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A method for forming a thin-film transistor (TFT) includes providing a substrate, forming a first patterned conducting layer on the substrate, forming an organic dielectric layer on the first patterned conducting layer and the substrate, forming a seeding layer on the organic dielectric layer, using the seeding layer as a crystal growing base to form an inorganic semiconductor layer on the seeding layer, and forming a second patterned conducting layer on the inorganic semiconductor layer.
Public/Granted literature
- US20110163307A1 THIN-FILM TRANSISTOR AND FORMING METHOD THEREOF Public/Granted day:2011-07-07
Information query
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