Invention Grant
US08289754B2 SRAM cells, memory circuits, systems, and fabrication methods thereof 有权
SRAM单元,存储器电路,系统及其制造方法

SRAM cells, memory circuits, systems, and fabrication methods thereof
Abstract:
A static random access memory (SRAM) cell includes a pair of cross-coupled inverters having a first node and a second node. A first transistor is coupled between the first node and a first bit line. A second transistor is coupled between the second node and a second bit line. A third transistor is coupled with the first node. The third transistor has a threshold voltage that is higher than that of a fourth transistor of the pair of cross-coupled inverters by about 10% or more. A fifth transistor is coupled between the third transistor and a third bit line.
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