Invention Grant
US08289773B2 Non-volatile memory (NVM) erase operation with brownout recovery technique
有权
具有欠压恢复技术的非易失性存储器（NVM）擦除操作
- Patent Title: Non-volatile memory (NVM) erase operation with brownout recovery technique
- Patent Title (中): 具有欠压恢复技术的非易失性存储器（NVM）擦除操作
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Application No.: US12942260Application Date: 2010-11-09
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Publication No.: US08289773B2Publication Date: 2012-10-16
- Inventor: Richard K. Eguchi , Jon S. Choy , Richard K. Glaeser , Chen He , Peter J. Kuhn
- Applicant: Richard K. Eguchi , Jon S. Choy , Richard K. Glaeser , Chen He , Peter J. Kuhn
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.; Daniel D. Hill
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method for erasing a non-volatile memory includes: performing a first pre-erase program step on the non-volatile memory; determining that the non-volatile memory failed to program correctly during the first pre-erase program step; performing a first soft program step on the non-volatile memory in response to determining that the non-volatile memory failed to program correctly; determining that the non-volatile memory soft programmed correctly; performing a second pre-erase program step on the non-volatile memory in response to determining that the non-volatile memory soft programmed correctly during the first soft program step; and performing an erase step on the non-volatile memory. The method may be performed using a non-volatile memory controller.
Public/Granted literature
- US20120117307A1 NON-VOLATILE MEMORY (NVM) ERASE OPERATION WITH BROWNOUT RECOVERY TECHNIQUE Public/Granted day:2012-05-10
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