Invention Grant
US08289790B2 Memory repair systems and methods for a memory having redundant memory
有权
具有冗余存储器的存储器的内存修复系统和方法
- Patent Title: Memory repair systems and methods for a memory having redundant memory
- Patent Title (中): 具有冗余存储器的存储器的内存修复系统和方法
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Application No.: US12779597Application Date: 2010-05-13
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Publication No.: US08289790B2Publication Date: 2012-10-16
- Inventor: Randall Rooney , Steve Zerza
- Applicant: Randall Rooney , Steve Zerza
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Memories, memory repair logic, and methods for repairing a memory having redundant memory are disclosed. One such memory includes programmable elements associated with respective redundant memory configured to have memory addresses mapped thereto, the programmable elements configured to be programmed with at least portions of the memory addresses. Such a memory further includes repair logic coupled to the programmable elements and configured to identify programmable elements available for programming to map memory addresses to respective redundant memory. One method for remapping a memory address of a memory to redundant memory includes receiving at least a portion of a memory address to be remapped to redundant memory, determining whether a programmable element associated with the redundant memory is available for programming, and when a programmable element is available, programming the programmable element such that the memory address will be mapped to the associated redundant memory.
Public/Granted literature
- US20110280091A1 MEMORY REPAIR SYSTEMS AND METHODS FOR A MEMORY HAVING REDUNDANT MEMORY Public/Granted day:2011-11-17
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