Invention Grant
- Patent Title: Negative bias temperature instability in dynamic operation of an integrated circuit
- Patent Title (中): 集成电路动态运行中的负偏压温度不稳定性
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Application No.: US12061531Application Date: 2008-04-02
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Publication No.: US08290759B1Publication Date: 2012-10-16
- Inventor: Fuchen Mu , Lifeng Wu
- Applicant: Fuchen Mu , Lifeng Wu
- Applicant Address: US CA San Jose
- Assignee: Cadence Design Systems, Inc.
- Current Assignee: Cadence Design Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F7/60
- IPC: G06F7/60 ; G06F17/50
Abstract:
A method of determining a Negative Bias Temperature Instability (NBTI) effect that combines degradation and recovery for dynamic operation of an integrated circuit (IC) includes: specifying one or more parameters for a degradation model for the IC during a stressed portion of a voltage cycle; specifying one or more parameters for a recovery model for the IC during an unstressed portion of the voltage cycle; determining a degradation value for the voltage cycle from the degradation model; determining a recovery value for the voltage cycle from the recovery model; determining an NBTI value that combines the degradation value and the recovery value for the voltage cycle; and saving at least one value for the NBTI value.
Information query
