Invention Grant
- Patent Title: Data error recovery in non-volatile memory
- Patent Title (中): 非易失性存储器中的数据错误恢复
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Application No.: US12316986Application Date: 2008-12-18
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Publication No.: US08291297B2Publication Date: 2012-10-16
- Inventor: Richard Coulson , Albert Fazio , Jawad Khan
- Applicant: Richard Coulson , Albert Fazio , Jawad Khan
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Kacvinsky Daisak, PLLC
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
When an error correction code (ECC) unit finds uncorrectable errors in a solid state non-volatile memory device, a process may be used in an attempt to locate and correct the errors. This process may first identify ‘low confidence’ memory cells that are likely to contain errors, and then determine what data is more likely to be correct in those cells, based on various criteria. The new data may then be checked with the ECC unit to verify that it is sufficiently correct for the ECC unit to correct any remaining errors.
Public/Granted literature
- US20100162084A1 Data error recovery in non-volatile memory Public/Granted day:2010-06-24
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