In a power semiconductor module, a semiconductor device including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode through soldering; a metal surface of one side of a laminated conductor having a laminated structure in which at least two types of metals are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode is connected to a metal surface of another side of the laminated conductor through soldering; and the laminated conductor includes a plurality of arch-like protrusions and a straight section connecting the arch-like protrusions, the straight section is connected with the front side of the semiconductor device, and the protrusions are connected with the second extraction electrode.